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| LED - Chip Preliminary Radiation Infrared Type DDH 6/21/2007 Technology AlGaAs/AlGaAs EL-870-11 rev. 06/07 Electrodes P (anode) up 1000 typ. dimensions (m) typ. thickness 160 (20) m 1000 anode gold alloy, 1.5 m cathode gold alloy, 0.5 m dotted, 25% covered PoC-05 Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Test Parameter conditions Forward voltage Forward voltage2 Reverse voltage Radiant power1 Radiant power2 Radiant power3 Radiant power2 Peak wavelength Spectral bandwidth at 50% Switching time 1 2 Symbol Min Typ Max Unit IF = 20 mA IF = 350 mA IR = 10 A IF = 20 mA IF = 350 mA IF = 350 mA IF = 700 mA IF = 20 mA IF = 20 mA IF = 20 mA VF VF VR e e e e P 0.5 tr, tf 860 5 3 1.3 1.7 1.5 1.9 V V V 4 62 120 200 870 45 10/25 880 mW mW mW mW nm nm ns Measured on bare chip on TO-18 header with EPIGAP equipment Measured on bare chip glued on a O 8 x 1mm Cu header (10 s after switched on) 3 Measured on epoxy covered chip glued on a O 8 x 1mm Cu header (10 s after switched on) with EPIGAP equipment (for information only) Labeling Type EL-870-11 Lot N e(typ) [mW] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
Price & Availability of ELC-870-11
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